Prior information notice
This notice is for prior information only
Section I: Contracting
authority
I.1) Name and addresses
University of Strathclyde
Learning & Teaching Building, 49 Richmond Street
Glasgow
G1 1XU
UK
Contact person: Rene de Sousa
E-mail: rene.de-sousa@strath.ac.uk
NUTS: UKM82
Internet address(es)
Main address: http://www.strath.ac.uk/
Address of the buyer profile: https://www.publiccontractsscotland.gov.uk/search/Search_AuthProfile.aspx?ID=AA00113
I.2) Joint procurement
The contract is awarded by a central purchasing body
I.3) Communication
Additional information can be obtained from the abovementioned address
I.4) Type of the contracting authority
Body governed by public law
I.5) Main activity
Education
Section II: Object
II.1) Scope of the procurement
II.1.1) Title
Supply and Commissioning of an Inductively Coupled Plasma Etcher
Reference number: UOS-36338-2025
II.1.2) Main CPV code
38000000
II.1.3) Type of contract
Supplies
II.1.4) Short description
An Inductively Coupled Plasma Etcher is sought to process semiconductor materials such as (but not limited to) Gallium Nitride and Silicon. The ideal system will be deployed for academic research and located within a cleanroom micro-fabrication facility.
II.1.6) Information about lots
This contract is divided into lots:
No
II.2) Description
II.2.2) Additional CPV code(s)
31712100
II.2.3) Place of performance
NUTS code:
UKM82
Main site or place of performance:
University of Strathclyde
II.2.4) Description of the procurement
The Institute of Photonics is seeking to complement their cleanroom micro-fabrication facility equipment with an Inductively Coupled Plasma Etcher. The system will be used to process semiconductor materials typically (but not limited to) Gallium Nitride (GaN) and Silicon (Si) passive and active devices. The system will be employed for academic research. It is purposed to bring extra capability to already existing assets.
The system sought after is destined to provide the capability of chlorinated and fluorinated distinct plasma etchings. Chlorine-based etch rates for GaN should be in the order of few hundreds of nanometres per minute (c.a. 500 nm/min). Selectivity to typical masking material such as photoresist and silica (SiO2) should be guaranteed. Fluorinated-based plasma in a Deep Reactive Ion Etching mode of Silicon should be provisioned to execute the Bosch process.
The system should allow the load-lock handling and processing of a single 4” wafer.
II.2.14) Additional information
The University is publishing this PIN for initial Market Research and Engagement purposes. The University may conduct further market engagement with the suppliers that note interest in this opportunity.
II.3) Estimated date of publication of contract notice:
12/03/2025
Section IV: Procedure
IV.1) Description
IV.1.8) Information about Government Procurement Agreement (GPA)
The procurement is covered by the Government Procurement Agreement:
Yes
Section VI: Complementary information
VI.3) Additional information
NOTE: To register your interest in this notice and obtain any additional information please visit the Public Contracts Scotland Web Site at https://www.publiccontractsscotland.gov.uk/Search/Search_Switch.aspx?ID=792877.
(SC Ref:792877)
VI.5) Date of dispatch of this notice
11/03/2025